论文总字数：30271字

摘 要

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摘要

量子点发光二极管（QLED）器件相比于传统的有机发光二极管（OLED）器件，其色纯度更好，响应更快，寿命长，并且耗能更少，因此成为近年来研究的热点。全无机钙钛矿量子点CsPbX₃（X=Cl、Br、I）由于其优秀的性能，如半峰宽窄，荧光量子产率高（~90%），荧光寿命短，完全覆盖可见光波段，可以应用在QLED、光电探测器、激光器等光电领域。目前全无机钙钛矿量子点发光二极管的电子传输层主要通过蒸镀的方法制备，因而增加了器件工艺的繁琐程度和制备成本。因此，本论文探索了使用全湿法制备钙钛矿QLED器件，简化了器件的制作工艺，并对其电致发光性能进行了相应的表征。具体工作如下：

（1）使用了热注入法合成了红、绿和蓝的钙钛矿量子点，其发射波长分别为682 nm，497 nm和430 nm，其半峰宽为47 nm，37.5 nm和20 nm。绿、红和蓝量子点的最佳荧光产率分别达到了95.7%、48.4%、52.5%。

（2）合成了ZnO纳米颗粒作为器件的无机电子传输层，通过吸收光谱、发射光谱和透射电镜（TEM）对其吸收、发射波长以及形貌和尺寸大小进行标定。利用九氟丁基甲醚（HFE 7100）作为ZnO的溶剂，最终实现全湿法制备钙钛矿QLED器件。

（3）调节绿光钙钛矿QLED中的工艺参数，如探究poly-TPD、TFB不同空穴传输层、量子点溶液浓度以及ZnO浓度等因素对QLED器件性能的影响。研究发现，当使用poly-TPD作为空穴传输层，量子点和ZnO的浓度分别为25 mg/mL和30 mg/mL时，器件的性能达到最优，电流效率和功率效率分别为0.83 cd/A和0.5 lm/W。

关键词：钙钛矿量子点；ZnO电子传输层；量子点发光二极管；全湿法

ABSTRACT

Compared with traditional organic light-emitting diode (OLED) devices, quantum dot light-emitting diode (QLED) devices have become a research hotspot in recent years due to the merits of higher color purity, faster response, longer lifetime and less energy consumption. All inorganic perovskite quantum dots CsPbX₃ (X=Cl, Br, I) can be applied in QLED, photodetector, laser and other photoelectric fields due to its superior properties, such as full width at half maxima (FWHM), high fluorescence quantum yield (QY) (~90%), short fluorescence decay lifetime, and fully covered range of visible light. At present, the electron transport layer (ETL) of all-inorganic perovskite QLED is commonly prepared by evaporation technique, which increases the complexity and cost of device process. Therefore, this thesis explored the preparation of perovskite QLED devices by all-wetting method, which simplified the manufacture process of the devices and characterized their electroluminescence properties. The specific work is as follows:

(1) Red, green and blue perovskite quantum dots (QDs) were synthesized by thermal injection method with emission wavelength of 682 nm, 497 nm and 430 nm, respectively, as well as FWHM of 47 nm, 37.5 nm and 20 nm, respectively. The optimal QY of green, red and blue quantum dots reached 95.7%, 48.4% and 52.5%, respectively.

(2) ZnO nanoparticles (NPs) were synthesized as inorganic ETL of the device, and their absorption, emission wavelength, morphology and size were calibrated by absorption spectrum, emission spectrum and transmission electron microscope (TEM). The perovskite QLED devices were prepared by the all-wetting method using the nine fluorobutyl methyl ether (HFE 7100) as the solvent for ZnO NPs.

(3) By adjusting the process parameters of green light perovskite QLED, the effects of different hole transport layers (HTL) of poly-TPD and TFB, the concentration of QD solution and the concentration of ZnO on the performance of QLED devices were also studied. It was found that when poly-TPD was used as HTL and the concentrations of QDs and ZnO were 25 mg/mL and 30 mg/mL, respectively, the optimal device performance can be reached with the current efficiency and power efficiency were 0.83 CD /A and 0.5 lm/W, respectively.

Keywords: perovskite quantum dots; ZnO electron transport layer; Quantum dot light-emitting diode; all-wetting method

目 录

摘 要 Ⅰ

Abstract Ⅱ

第一章 绪论 1

1.1引言 1

1.2量子点的定义及性质 1

1.3钙钛矿量子点性质及合成方法 2

1.4量子点的应用 5

1.5量子点发光二极管 6

1.6本论文的研究目的和主要内容 8

第二章 钙钛矿量子点的制备 9

2.1 引言 9

2.2 实验方法 9

2.3 本章小结 12

第三章 电子传输层的制备 13

3.1 引言 13

3.2 实验方法 13

3.3 本章小结 15

第四章 钙钛矿量子点发光二极管的制备 16

4.1 引言 16

4.2 电致发光二极管的性能参数 17

4.3 量子点发光二极管的制作 18

4.4 量子点发光二极管的性能测试 20

第五章 工作总结和展望 21

5.1 工作总结 21

5.2 展望 22

参考文献 23

致 谢 25

第一章 绪论

1.1引言

半导体量子点（Quantum Dots）自上个世纪80年代首次被合成出以来，受到科研界以及工业界广泛的关注。量子点加工方法简单，具有多种合成方式，可通过旋涂，蒸镀等方法成膜，极大的降低了器件工艺的难度和成本。由于胶体量子点具有高的光致发光率(PLQY)、可调谐波长和窄的发射波长，因此大多数研究集中在胶体量子点(QDs)上。鉴于这些优势，量子点在太阳能电池、激光器、发光二极管(LEDs)、和生物成像中都有很高的应用价值。同时量子点具有较高的色纯度，是下一代显示器的理想选择。^[1-2]

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