功率半导体器件结构及其对电力变换电路性能的影响研究

论文总字数：34434字

摘 要

本文基于仿真软件Silvaco TCAD，对功率半导体器件IGBT的结构进行了相关研究。

在明晰功率半导体器件原理和仿真软件Silvaco TCAD的使用方法的基础上，本文着重对基于平面型IGBT的结构分析并在Silvaco TCAD平台上仿真得到其特性，保证器件各层掺杂浓度不变，通过改善平面型IGBT的结构并仿真得到改善结构后的沟槽型IGBT的特性，比较两者的静态IV特性，动态的关断特性等，从而验证了沟槽型IGBT优于平面型IGBT，器件的结构得到改善。在功率半导体器件中，开关效应对功耗影响很大，在沟槽型IGBT的基础上进一步优化器件,探索p 层掺杂浓度和n buffer层掺杂浓度对关断特性的影响。随着P 层掺杂浓度升高，在IGBT导通时注入到基区的非平衡载流子的浓度也就越高，关断的时候集电极电流减小的速度就越慢，损耗越大。而随着N buffer掺杂浓度的增长，抑制作用也在逐渐增加，因此在关断的时候电流减小得变快，从而能够减小关断时的损耗。但若N buffer掺杂浓度太高也会引起正向压降的增加，因此需根据实际需要合理地优化该参数。

在multisim中搭建单相半桥电压型逆变电路并分别使用平面型IGBT和沟槽型IGBT进行仿真，进一步验证改善了各层浓度和结构的IGBT性能得到了提升，从器件层次提高电路的性能。

关键词：功率半导体器件，IGBT，Silvaco TCAD，单相半桥电压型逆变电路，multisim

THE RESEARCH ON POWER DEVICE STRUCTURE AND ITS IMPACT ON A POWER CONVERSION CIRCUIT

ABSTRACT

Based on the simulation software Silvaco TCAD, the structure of IGBTs of power semiconductor devices has been studied.

This thesis mainly focused on the structural analysis based on planar IGBT and by simulating on the Silvaco TCAD platform to obtain its characteristics, make sure that the doping concentration of the device is constant，by improving the structure of the planar type IGBT and to obtain the characteristics of the improved structural IGBT. Comparing the static IV characteristics of the two types IGBT and dynamic shutdown characteristics, etc., thus verifying that the structure of the device has been improved. Then on the basis of trench-type IGBT to further optimize the device. The effects of p layer doping concentration and n buffer layer doping concentration on the shutdown characteristics were investigated. With the increase of the P collector doping concentration, the higher the concentration of the unbalanced carriers injected into the base region when the IGBT turns on, the slower the current decreases and the power dissipation becomes larger. With the increase of the doping concentration of N buffer layer, the inhibition is also increasing gradually, so the current decreases rapidly at turn-off, which can reduce the power consumption. However, if the N buffer layer doping concentration is too high will lead to an increase in forward voltage drop, it should be reasonable to set the parameters.

On the basis of understanding the principle of single-phase and half-bridge voltage-type inverter circuit, the model of the circuit is built in multisim and simulated by using planar IGBT and trench IGBT respectively. Further validating the improved IGBT performance with the improved concentration of the layers and structure, resulting in the improved circuit performance without additional circuit conditions.

KEYWORDS: power semiconductor devices, IGBT，Silvaco TCAD，single-phase half-bridge voltage-type inverter circuit，multisim

目 录

摘 要 I

Abstract II

第一章 绪 论 1

1.1 课题背景与意义 1

1.2 常用功率器件介绍 2

1.3 本文主要内容与结构安排 2

第二章 IGBT简述 4

2.1 IGBT基本结构 4

2.2 IGBT工作原理 4

2.3 IGBT工作特性 6

2.3.1 IGBT静态特性 6

2.3.2 IGBT动态特性 7

2.4 IGBT优缺点及其改进方向 8

第三章 器件仿真平台silvaco TCAD介绍 9

3.1 仿真工具Silvaco TCAD简介 9

3.2 Silvaco软件的特点 11

3.2.1器件结构的网格化 11

3.2.2器件仿真物理模型的选取 11

3.2.3边界条件的选择 13

3.2.4计算方法的选择 13

第四章 IGBT仿真器件的建立和分析 14

4.1 IGBT仿真器件1的建立和分析 14

4.1.1 IGBT仿真器件1的建立 14

4.1.2 IGBT仿真器件1特性分析 15

4.2 IGBT仿真器件2的建立和分析 16

4.2.1 IGBT仿真器件2的建立 16

4.2.2 IGBT仿真器件2特性分析 18

4.3 器件1与器件2 的比较与分析 19

4.4 器件进一步的优化分析 22

4.4.1 p 层的掺杂浓度对关断性能的影响 22

4.4.2 n buffer层掺杂浓度对关断性能的影响 23

4.5 结论 24

第五章 电路仿真软件Multisim介绍 25

5.1 仿真软件multisim简介 25

5.2 multisim软件的特点 25

5.2.1应用广泛 25

5.2.2数据库大 25

5.2.3减少原型迭代次数 25

第六章 单相半桥电压型逆变电路的仿真 27

6.1 单相半桥电压型逆变电路结构及其工作原理 27

6.2 单相半桥电压型逆变电路仿真 28

6.2.1器件1在单相半桥电压型逆变电路的应用 28

6.2.2器件2在单相半桥电压型逆变电路的应用 29

第七章 总结与展望 30

7.1 论文主要工作和创新点 30

7.2 课题展望 30

参考文献（References） 31

致 谢 33

附录 34

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