论文总字数：21356字

摘 要

随着新型发电技术的飞速发展，这对电力电子装置的性能指标提出了更高的要求，而电力电子器件对于整个装置的性能指标起到决定性的影响。新兴碳化硅功率器件具有传统硅半导体所不具备的开关速度快、阻断电压高和在高温环境下工作能力强等优点更适合于未来电力电子技术的发展需求。由于碳化硅功率器件在各个行业展现出优良的特性，更多的研究人员开始对其应用展开更深入的研究。为保证碳化硅功率器件的正确使用并充分发挥其特性优势，使得基于碳化硅功率器件的变换器系统能够获得更优的性能，需要对碳化硅功率器件的电气特性和参数进一步探究。

本文首先分析了碳化硅半导体的相关特性，包括碳化硅功率器件的静、动态参数。在了解其相关特性（如导通电阻特性、开启电压特性、转移特性等）基础上，利用软件Silvaco进行碳化硅半导体结构设计，并对其进行仿真研究，其中我们主要研究了碳化硅半导体的输出特性,分析了在不同电子迁移率下最大饱和漏电流的变化情况,以及相同电子迁移率下正反向输出特性的比较。最后通过实验与仿真得出相关结果，达到研究目的。

关键词：碳化硅；MOSFET；转移特性；穿透电压；开关特性

Abstract

With the rapid development of new generation technology, higher requirements are put forward for the performance indexes of power electronic devices, which play a decisive role in the performance indexes of the whole device. New silicon carbide power devices are more suitable for the future development of power electronics technology because of their advantages such as fast switching speed, high blocking voltage and strong ability to work in high temperature environment. Due to the excellent characteristics of silicon carbide power devices in various industries, more and more researchers began to carry out more in-depth research on their applications. In order to ensure the correct use of silicon carbide power devices and give full play to its advantages, so that the converter system based on silicon carbide power devices can achieve better performance, it is necessary to further explore the electrical characteristics and parameters of silicon carbide power devices.

Firstly, this paper analyzes the characteristics of silicon carbide semiconductor, including the static and dynamic parameters of silicon carbide power devices. On the basis of understanding its relevant characteristics (such as on resistance characteristics, on-off voltage characteristics, transfer characteristics, etc.), the structure design of silicon carbide semiconductor is carried out by using the software SILVACO, and its simulation research is carried out. Among them, we mainly study the output characteristics of silicon carbide semiconductor, and analyze the change of the maximum saturated leakage current under different electron mobility, And the comparison of the forward and reverse output characteristics under the same electron mobility. Finally, the relevant results are obtained through experiments and simulations to achieve the purpose of the study.

Key words: silicon carbide; MOSFET; transfer characteristics; through voltage; switching characteristics

目录

摘要 I

图目录 IV

第一章 绪论 1

1. 1研究背景及意义 1

1. 2国内外研究现状 1

1. 3论文研究内容 2

1. 4论文结构 2

第二章 SiC功能器件特性与原理分析 3

2. 1SiC MOSFET工作原理 3

2. 2SiC功能器件特性与分析 5

2.3 SiC MOSFET表征方法 5

2.4本章小结 9

第三章SiC MOSFET功率器件结构设计与仿真研究 10

3.1SiC MOSFET的结构设计 10

3.2 SiC MOSFET输出特性分析 11

3.3 本章小结 11

第四章 总结与展望 12

4.1 全文工作总结 12

4.2 后续工作展望 12

参考文献 13

致谢 15

附录 16

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