论文总字数：20275字

摘 要

GaN HMET功率器件凭借着卓越的性能和优异的抗辐射能力，在航空和军事通信领域被广泛应用。但是。相比于Si基半导体，GaN材料作为第三代半导体拥有更大的禁带宽度、临界电场自己电子饱和速率。同时因为在势累层的极化效应产生的高浓度导电沟道2DEG，GaN很适合作为功率器件的半导体材料。由于GaN HEMT器件在抗辐射能力相比于传统的Si基半导体拥有显著提升，本文希望分析借助引用文献数据并总结出的规律，能对GaN HEMT器件在电力电子领域的抗辐射性能有帮助。以下为本文探讨硅基GaN器件总剂量电离辐射损伤效应研究的内容。

第一章对GaN电力电子器件的研究背景进行分析，并总结出研究意义。同时也确定了本文研究内容。

第二章对GaN材料的基本原理和GaN HEMT器件的增强型和耗尽型进行综述。

第三章对GaN HEMT电力电子器件的应用及三大优势具体说明。

第四章先对总剂量电离辐射效应的原理和损伤机理进行阐述，然后综述总剂量电离辐射对GaN HEMT器件的影响。

最后，引用吕玲文献对GaN HEMT器件的电离辐射进行数据分析，总结规律。

关键词：GaN；HEMT；功率器件；总剂量电离辐射效应；总剂量电离辐射效应损伤；

Damage Effect of Total Dose Ionizing Radiation on Silicon-based GaN Devices

Abstract

Gan hmet power devices are widely used in aviation and military communication fields because of their excellent performance and radiation resistance. But. Compared with Si based semiconductors, Gan materials, as the third generation semiconductors, have larger band gap width and critical electric field self electron saturation rate. At the same time, Gan is very suitable for the semiconductor materials of power devices because of the high concentration of 2DEG generated by the polarization effect in the potential accumulation layer. As GaN HEMT devices have a significant improvement in radiation resistance compared with traditional Si based semiconductors, this paper hopes to analyze the laws summarized by reference to literature data, which can be helpful to the radiation resistance of GaN HEMT devices in the field of power electronics. In this paper, the total dose of ionizing radiation damage effect of silicon-based Gan devices is discussed.

The first chapter analyzes the research background of Gan power electronic devices, and summarizes the significance of the research. At the same time, the research content of this paper is determined.

In the second chapter, the basic principles of Gan materials and the enhanced and depleted GaN HEMT devices are reviewed.

In the third chapter, the application and three advantages of GaN HEMT power electronic devices are explained.

In Chapter 4, the principle and damage mechanism of total dose ionizing radiation effect are described, and then the influence of total dose ionizing radiation on GaN HEMT devices is summarized.

Finally, the data of ionizing radiation of GaN HEMT devices are analyzed and the rules are summarized.

Key words: GaN, HEMT,；power device； total dose ionizing radiation effect； total dose ionizing radiation effect damage;

目 录

摘 要 I

Abstract II

第一章 绪 论 1

1.1 研究背景及意义 1

1.2 研究内容 2

第二章 GaN HEMT器件的结构 4

2.1 GaN材料 4

2.2 GaN HEMT器件的分类 4

2.2.1 典型的增强型GaN HEMT器件 4

2.2.2 典型的耗尽型GaN HEMT器件 6

2.3 本章小结 6

第三章 GaN HEMT电力电子功率器件的应用及优势 7

3.1 GaN HEMT功率器件的应用 7

3.2 GaN HEMT功率器件优势 7

3.2.1 提高工作电压及工作频率 7

3.2.2 降低导通损耗，提高开关速度 8

3.2.3 提高热稳定性 8

3.3 本章小结 8

第四章 GaN HEMT功率器件的总剂量电离辐射效应 加图 9

4.1 总剂量电离辐射效应基本原理 9

4.2 总剂量电离辐射效应损伤机理 10

4.3 总剂量电离辐射对GaN HEMT器件影响 10

4.4 γ射线对硅基GaN HEMT器件的特性测试 11

4.5 本章总结 14

第五章 总 结 15

5.1 总 结 15

致 谢 16

参考文献（reference） 17

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