论文总字数：15264字

目 录

摘要 Ⅰ

Abstract Ⅱ

1 绪论 1

1.1 ZnO的基本物理性质及其应用 1

1.2 ZnO光学性质研究状况 2

1.2.1 ZnO的透过率 2

1.2.2 ZnO的反射率与折射率 2

1.3本文的研究内容 8

2 ZnO纳米薄膜的制备方法 8

2.1 喷涂热分解 8

2.2 电子束蒸发 9

2.3 磁控溅射 9

2.4 溶胶—凝胶法 9

3 ZnO薄膜的表征方法或仪器 10

3.1 X射线衍射 10

3.2 原子力显微镜 10

3.3 拉曼光谱 11

3.4 紫外—可见分光光度计 11

3.5荧光光谱仪 12

4 ZnO纳米晶薄膜的内应力对折射率的影响 12

4.1电子束蒸发制备ZnO薄膜 12

4.1.1 电子束蒸发装置 12

4.1.2 ZnO薄膜制备 13

4.2 ZnO纳米晶薄膜的微结构表征与内应力计算 13

4.3 内应力对于折射率等光学性质的影响 17

5 结论 19

参考文献 19

致谢 22

内应力对于氧化锌光学薄膜折射率的影响研究

周严晶

，China

Abstract:Zinc Oxide (ZnO) is an excellent photoconductive material. It has a wide range of applications in solar cells, computer-related technologies and semiconductor materials industries. The stress in the film is an important factor which affects the crystal quality of the ZnO film. Therefore, the refractive index, exciton density, extinction coefficient and other properties of the ZnO film are affected, thus affecting the performance of the optoelectronic device made of ZnO film, and thus affect the performance of optoelectronic devices made of ZnO thin films. In this study, a zinc oxide thin film with good crystallinity was prepared on a quartz substrate by electron beam evaporation and annealed at 300, 400, 500, and 600°C. for one hour. Then the crystallinity and optical properties of the samples were characterized by X-ray diffractometry, atomic force microscopy, ellipsometry and fluorescence photometer. The relationship between the internal stress and the refractive index of the film was studied, and the reasons were analyzed. The results show that the change trend of the refractive index of the film with temperature coincides with the change trend of the internal stress with the temperature. When the internal stress increases, the refractive index of the film decreases, and when the internal stress decreases, the refractive index increases accordingly. . The internal stress is affected by the annealing temperature. The minimum is 0.0448 GPa at 500°C and the maximum refractive index is 1.99. From this we can also find that when the internal stress decreases, the crystalline quality of the ZnO thin film also increases, which in turn improves the performance of the optoelectronic device made of the ZnO thin film. Therefore, these research results have important guiding significance and reference value for improving the performance of ZnO-based optoelectronic devices.

Key words：zinc oxide thin film；electron beam evaporation；internal stress； refractive index

1 绪论

1.1 ZnO的基本物理性质及其应用

ZnO是Ⅱ-Ⅵ族化合物，是一种激子束缚能大约为60meV的直接带隙半导体，激子束缚能大约为60meV。具有优良的光电导性质，在太阳能电池，计算机相关技术及半导体材料行业具有非常广泛的应用，因此吸引了大量研究人员对ZnO材料进行研究，目前已合成出具有丰富形貌的ZnO结构。同时，当ZnO被波长小于 387 nm 的紫外光照射时，ZnO会产生激发效应，从而产生光生电子对，并生成具有高氧化还原能力的基团，因此，可以将ZnO用作反应催化剂。它可以对各种有机污染物进行光催化作用，并氧化去除，这是现今一种新型的有机污染处理提方式。

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