柔性基底多晶硅薄膜制备工艺研究

论文总字数：22065字

摘 要

现今随着能源问题和环境问题的日益严重，光伏产业愈加发展，人们对第三代太阳能电池——太阳薄膜电池的研究越来越多，对可再生能源的研究已成为各国研究的重点。另一方面，薄膜电池中的多晶硅薄膜还大量应用于电子显示行业，应用广泛。为了获得具有良好性能的多晶硅薄膜，必须努力增大多晶硅薄膜的晶粒尺寸，改善它的结晶情况。

本论文在制备高质量多晶硅薄膜方面做了一系列实验，将铜箔作为柔性基底材料在结合电子束热蒸发法和金属诱导的基础上进行了不同工艺的诱导退火。热处理时间、退火温度对最终的硅膜结果都有重要影响。随着硅膜在真空退火步骤的热处理时间增加时，多晶硅薄膜厚度增大，大晶粒增多、小晶粒减少，晶粒尺寸变大，结晶质量提高，方块电阻和电阻率变高。实验中，通过使用电子扫描显微镜来对多晶硅薄膜进行表征，实验结果是通过分析这些来自电镜的图像得到的。

最终，论文分析了探索实验失败的原因，提出改进意见，希望为制备出更大晶粒、更高质量的多晶硅薄膜提供参考意见。

关键词：多晶硅薄膜，太阳电池，电子显示，柔性基底,电子束热蒸发，晶化，热处理

A STUDY ON THE TECHNOLOGY OF POLYCRYSTALLINE SILICON THIN FILM ON FLEXIBLE SUBSTRATE

Abstract

Nowadays, as the problem concerning energy as well as environment is becoming increasingly serious, photovoltaic industry is changing rapidly. As the third generation, the thin film solar cells is gaining popularity. Consequently, the research on renewable energy has become the focus of the whole world. At the same time, polycrystalline silicon thin film is also widely used in the display industry. In order to obtain polysilicon thin film with good properties, it is necessary to make effort to increase its grain size and improve its crystallization.

In my paper, a series of experiment for preparing polycrystalline silicon thin film with high quality has been done. We firstly treat copper foi as flexible substrate materials. Then we combine electron beam evaporation technology and metal inducing crystallization. Based on this theory, they are annealed at different processes. The heat treatment time, the annealing temperature both influence the final silicon film result. The thickness of the silicon film increases with the increase of the silicon heat treatment time, the large grain size, the small grain size, the crystal quality, the block resistance and the resistivity are higher. In the experiment, the polysilicon thin film was characterized by electron scanning microscope, and the results were obtained by analyzing the images obtained from TEM.

Finally, the paper not only analyzes the reasons for the failure of exploration experiments, but also puts forward suggestions for improving the technology of polycrystalline silicon film with better quality.

KEY WORDS: polycrystalline silicon thin film,solar cells,display,flexible substrate,electron beam evaporation,crystallization, annealing

目 录

摘要 ……………………………………………………………………………………Ⅰ

Abstract …………………………………………………………………………… Ⅱ

1. 绪论 ………………………………………………………………………1

1.1 研究背景 …………………………………………………………………1

1.1.1 光伏产业 ……………………………………………………………1

1.1.2 电子显示行业 ………………………………………………………2

1.2 研究意义及目的 ……………………………………………………………2

1.3 本论文主要研究内容 ………………………………………………………4

1. 多晶硅薄膜性能及制备方法 ………………………………………………5

2.1 多晶硅薄膜的晶粒结构与结构特性 ……………………………………5

2.2 多晶硅薄膜的电学特性 …………………………………………………5

2.3 制备方法 …………………………………………………………………6

2.3.1沉积硅膜 …………………………………………………………6

2.3.2非晶硅晶化 ………………………………………………………7

第三章 多晶硅薄膜的制备实验过程 ……………………………………………9

3.1 基底准备与 ………………………………………………………………9

3.2制备非晶硅硅膜 …………………………………………………………9

3.3结晶晶化制备多晶硅 ………………………………………………………12

第四章 实验分析与后续探索 ………………………………………………………14

4.1 非晶硅薄膜分析 …………………………………………………………14

4.2 晶化温度的影响 …………………………………………………………15

4.3 热处理时间的影响 ………………………………………………………15

4.4多晶硅薄膜杂质缺陷 ………………………………………………………16

4.5 硅膜转移探索 ……………………………………………………………16

4.6腐蚀去基底探索 ……………………………………………………………17

4.7综合实验改进 ………………………………………………………………18

第五章 结论 ………………………………………………………………………19

致谢 …………………………………………………………………………………21

参考文献（References） ……………………………………………………………22

1. 绪 论

1.1 研究背景

1.1.1光伏产业

剩余内容已隐藏，请支付后下载全文，论文总字数：22065字