650V硅基GaN eHEMT功率器件结构设计及仿真技术研究

论文总字数：26418字

摘 要

众所周知，对于功率器件来说高电压和高功率一直以来都是十分热门的话题。借助新型半导体材料的优良特性，功率器件有了十足的发展前景。本文就介绍了一种新型的半导体材料GaN,对比传统的SiC材料，GaN 有着更为优秀的电迁移率和更高的击穿电场，目前已经是功率器件的制备领域研究重点之一。

针对GaN HEMT器件如何提升其耐压性能已经有了很多讨论，所以，本篇文章就借助了Slivaco TCAD仿真软件，建立了一个AlGaN/GaN HEMT器件模型，目的是为了进一步提高AlGaN/GaN HEMT器件的性能。首先重点讨论了AlGaN/GaN HEMT器件的半导体物理原理，根据理论得知将受主陷阱引入到缓冲区中可以有效的降低缓冲层泄露电流。基于以上原理和讨论，建立了一个可以工作在650V的GaN HEMT功率器件，并给出了关于其工作特性的分析。

本文研究的结论和仿真结果可以用来对AlGaN/GaN HEMT高耐压进行进一步的参考。

关键词：AlGaN/GaN HEMT,泄露电流，击穿电压，650V,GaN

Research on structure design and simulation technology of 650V silicon-based GaN eHEMT power device

Abstract

As a typical third-generation wide-gap semiconductor material, GaN material has a very broad prospect in high voltage and high power device scenarios.Compared with traditional Si - based devices, AlGaN/GaN devices will have better electromobility and higher breakdown electric field.These advantages have become one of the hot research points in the field of power electronic devices.

As a result of today's semiconductor field, research on high-voltage AlGaN/GaN HEMT devices has been generated.However, there is still a big gap in the theoretical limit of the maximum breakdown voltage distance.Therefore, with the help of Slivaco TCAD simulation software, this paper establishes a AlGaN/GaN device model to further improve the voltage resistance characteristics of AlGaN/GaN HEMT devices.The surface electric field and inner electric field are obtained by using two - dimensional poisson equation.And on this basis, according to different levels of the acceptor traps, the acceptor traps is introduced into the buffer, observe its of AlGaN/GaN HEMT leakage current, the experimental results show that the introduction of deep-level acceptor traps can effectively reduce the buffer layer after leakage current, so simply introducing the shallow level acceptor traps can not effectively reduce the leakage current.According to the AlGaN/GaN HEMT leakage current generated after different concentration of acceptor traps introduced into the buffer, it is observed that only when the concentration of the acceptor trap introduced exceeds the concentration of the donor impurities in the buffer layer, can the leakage current be effectively suppressed.This paper also discusses and optimizes the AlGaN/GaN HEMT conforming structure of grid-plate and discontinuous leak-field plate, so that the maximum breakdown voltage can reach 650V.

The conclusions and simulation results of this paper can be used for further reference to AlGaN/GaN HEMT high voltage characteristic optimization.

Keywords: AlGaN/GaN HEMT , leakage current, breakdown voltage, 650V , GaN

目 录

摘 要 I

Abstract II

目 录 III

第一章 引言 1

1.1 研究背景及意义 1

1.2 研究现状 2

1.2.1 GaN HEMT器件的发展 2

1.2.2 GaN HEMT耐压性能研究 3

1.3 论文主要内容 4

第二章 AlGaN/GaN HEMT 器件 6

2.1 基本原理 6

2.1.1 自发极化效应 6

2.1.2 二维电子气产生机理 6

2.2 AGaN/GaN HEMT基本结构 7

2.3 击穿特性研究 8

2.4本章小结 9

第三章 slivaco仿真软件介绍 10

3.1 slivaco简介 10

3.2 主要功能 11

3.3 本章小结 13

第四章 650V GaN HEMT 器件仿真 14

4.1 器件结构 14

4.2 特性分析 15

4.3 本章小结 17

第五章 总结与展望 18

致 谢 19

参考文献 21

附 录 23

第一章 引言

剩余内容已隐藏，请支付后下载全文，论文总字数：26418字