雷电压作用下晶体管器件损坏机理的分析

论文总字数：15567字

目 录

摘要……………………………………………………………………Ⅰ

Abstract………………………………………………………………Ⅱ

0.引言……………………………………………………………………1

1. 晶体管损坏机理的理论分析…………………………………………2

1.1晶体管的特性……………………………………………………………………………2

1.2晶体管的损坏机理………………………………………………………………………5

1.3常见的几种晶体管保护方式……………………………………………………………6

2.实验方案与数据分析…………………………………………………7

2.1实验方案…………………………………………………………………………………7

2.2实验器件与实验仪器……………………………………………………………………10

2.3实验数据分析……………………………………………………………………11

2.3.1雷电冲击无保护晶体管的损坏实验……………………………………………11

2.3.2 雷电冲击有TVS管并联保护晶体管的损坏实验……………………………12

2.3.3 雷电冲击基本放大电路中无任何保护的晶体管的损坏实验…………………13

2.3.4 雷电冲击基本放大电路中的有TVS管并联保护晶体管的损坏实验………14

2.3.5 实验结果及分析………………………………………………………………14

3.结论…………………………………………………………………16

参考文献………………………………………………………………18

致谢……………………………………………………………………19

雷电压作用下晶体管器件损坏机理的分析

顾佳妮

, China

Abstract：In view of the problem of damage to the transistor devices caused by lightning overvoltage, the phenomenon of secondary breakdown of the transistor is analyzed theoretically by the hot spot generated by the local current concentration, and the lightning combined wave generator is used to simulate the lightning overvoltage impact. Different types of transistor experimental methods, experiment and draw conclusions: 1), using a combination of waves on the impact of individual transistors, transistors in the 0.6 ~ 2.8kV damage occurs, and be port lightning impulse withstand voltage level is generally higher than the ce port; 2), the combination of wave When there is a TVS tube in parallel protection transistor, the lightning impulse withstand voltage of the transistor mostly exceeds 6kV, only one type of transistor is lower than this value, the transistor was destroyed when the be port and the ce port were respectively hit by the surge voltage of 2.5kV and 3.7kV.; 3), put a separate transistor into the actual amplifier circuit, the transistor is easily destroyed, and the minimum surge voltage (0.1kV) generated by the combination wave generator can also destroy the transistor.; 4). The same TVS tube is connected in parallel to both ends of the transistor in the same amplifier circuit. The transistor fails at 2 to 5 kV, and some fail even when it exceeds 6 kV;5). The TVS tube not only effectively protects the transistor, but also improves the lightning of the transistor, maintain transistor's original performance, the impact withstand voltage level can even make the lightning impulse withstand voltage level of the transistor ce port better than the lightning impulse withstand voltage level of the be port.,The article uses the combination of theory and experiment, which has certain reference value in practical application of lightning voltage protection.

Key words：Triode transistor; Lightning overvoltage; Secondary breakdown; Transient suppression diode

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